n-Si/SnO2 junctions based on macroporous silicon for photoconversion

Cacheta, H.
July 1997

Fuel and Energy Abstracts, vol 38-4, p. 244

It is proved that it is possible to form a photovoltaic junction by spraying a thin, transparent, conductive SnO2 layer onto macroporous n-type silicon produced by photoelectrochemical etching. The cell reflectivity spectrum is flat and drops to a few percent in the visible and near infrared spectral range. EDX analysis and impedance measurements show that charge separation and current collection occur in the upper part of the pores and in the interpore region, whereas the bottom of the pores only acts as a photon absorber. The active junction area is found to be four times larger than with a mirror-polished substrate. A solar conversion efficiency of 10% is achieved by a solar cell equipped with just a front ring contact.

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